SOLVED: Carrier concentration profiles in a biased pn diode; diffusion capacitance Consider a long-base Si pn junction of cross-sectional area 100 m^2 maintained at 300K, with minority-carrier lifetimes tn = 1 s
Diode junction capacitance | Transition capacitance and diffusion capacitance
Transition and Diffusion capacitance - semesters.in